Course description

FYS 4310 Semiconducror Material Science , 10 Credits

Content:

The preparation and processing of semiconductors made to produce devices is used as a framework to learn topics in materials science. The framework span from raw material purification and crystal growth to rediculously large integrated circuits and microsystems.  Basic principles and examples are drawn mainly from Si, Si-Ge, III-V technology: Crystal defects, Vacancy models, stacking fault creation and dynamics, pair-production of doping atoms, deep levels, defect reactions, gettering, interaction of low energetic ions with semiconductor materials.  Experimental methods for semiconductor process characterization; CV, IV,  SEM, SIMS,AES, STM, RBS, TEM, elipsometri,FTIR, DLTS etc Detailed physical description of semiconductor processing: epitaxial crystal growth , MBE, MOCVD, diffusion, ion implantation, ion etching, oxidation, thin film technology, silicidation , laser treatment, micro-machining.  Student also pick a project/topic to be presented in the course.

Learning goals:

The knowledge is a common base for all students of physical electronics and simultaneously provide a link for communication with students and researches of other primary disciplines such as modern electronic engineering, nanotechnology, solid state physics and material science. The aim is to obtain the basis for understanding the link between different processing techniques and the characteristics of a semiconductor. The course will provide insight into some of the steps in the production of semiconductor devices. The course also provides an introduction to experimental methods that are used in parts of physical electronics and which are often used as documentation for published scientific results.

Testing of learned knowledge:

The course has graded homework. Thus the students has to learn during the whole semester. These problems will be a combination of simple calculations where the student applies the content of the book and problems where the student may combine knowledge and information in order to achieve new knowledge. The thought process is here more important than the result. The students will train in problem solving. The master students should be able to follow a discussion with researchers on topics from the curriculum. These chores and skills and absorbtion of learning goals will be tested during the course and  final exam -se also bolow on exam.

Requirements:

Accepted as a master student of ELDAT, FAM or MENA study program .
International applicants, if you are not already enrolled as a student at UiO, please see the Universities information about admission requirements and procedures for international applicants.

Recommended prior knowledge:

FYS2210 - Semiconductor components and an introductory course in physics and materials science of solids i.e. FYS3410 - Condensed matter physics or MENA3000.

Form and duration:

One semester , 4 hours pr week divided between lectures (70%) and discussion of problems.

Exam information
3 compulsary multiple choice exams during the semester.  3 compulsory home work exercises (approx. 30% weight).  Project work (approx. 20% weight). Final oral exam (approx. 50% weight). Letter grade.  For detailed information about examinations at the Faculty of Mathematics
 and Natural Sciences please see http://www.matnat.uio.no/english/studies/index.html

Last Update 10 jan 2009. Responsible for page terje.finstad@fys.uio.no.