Course description
FYS 9310 Semiconductor Material Science , 10 Credits
Content:
The preparation and processing of semiconducting in the making modern nanoelectronic devices and test structures for research is used as a framework to learn topics in materials science and covers topics from raw material purification and crystal growth to semiconductor material science issues in fresent and future ridiculously large scale integrated circuits and microsystems. Basic principles and examples from Si, Si-Ge and III-V technology: Crystal defects; Van Vechten's vacancy model, Fair's diffusion model, stacking faults and dynamics, pair production in doping, deep levels, gettering, interaction between low-energy particles and semiconducting materials, interaction of plasmas with surfaces. Experimental techniques for characterising semiconductor structures : AES, RBS, TEM, SEM, SIMS, ellipsometry, FTIR, DLTS etc. Detailed physical description of semiconductor processing: epitaxial crystal growth , MBE, MOCVD, diffusion, ion implantation, ion etching, oxidation, thin film technology, silicidation , laser treatment, micro-machining. Process integration of example technologies CMOS, MEMS. Students also pick a project/topic to be presented in the course.
Learning goals:
To form a basis for understanding the link different processing techniques and the characteristics of a semiconductor. The course will provide insight in the steps in the production of semiconductor devices. A survey of of experimental methods in physical electronics is also given. The knowledge is a common base for all students of physical electronics and simultaneously provide a link for communication with students and researches of other primary disciplines such as modern electronic engineering, nanotechnology, solid state physics and material science.
Testing of learned knowledge:
The course has graded homework.(3 compulsary) during the whole
semester. The character of the home work problems will vary:
some can be considered as simple tests of the students knowledge of the
text book. Other problems test the student's ability to combine
knowledge and formulate simple but sound scientific hypothesis
considering the students background. It is natural that
students at this level expand on their background as required. The
students will train in problem solving which provides a help and guide
for the home work. The depth of understanding and width of
knowledge will also be tested (3 compulsory quick tests).
The student make a literature based project during the course which
will be graded where the students understanding and ability to
separate essential principles from recipe details will be
tested. The PhD students are expected to end at a level being able to follow and
participate in a discussion with researchers on topics from the
curriculum. The final exam is oral and the students that are considered
good will typically be good at presenting and discuss the
principles of topics, given their background, and based on the science
principles explicitly being emphasized in the curriculum and lectures.
Some overview is also expected.
Requirements:
Accepted as a PhD student at UiO or at another university with formal agreememts with UiO.
Recommended prior knowledge:
Basic or introductury university courses in semiconductor devices (eg FYS2210) and solid state physics (eg FYS3410)or material science of solids.(MENA4000)
Form and duration:
One semester , 4 hours pr week divided between lectures (70%) and discussion of problems.
Exam information
3 compulsary multiple choice exams (approx 4h) during the semester (6 % weight).
3
compulsory graded home works (approx. 24% weight). Project work
(approx.
20% weight). Final oral exam (approx. 50% weight). Passed or not passed.
For detailed information about examinations at the Faculty of Mathematics and Natural Sciences please see http://www.matnat.uio.no/english/studies/index.html
Last Update 10 jan 2009.
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